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| profet ? preliminary data sheet BTS550P semiconductor group page 1 of 15 1998-aug-31 smart highside high current power switch features overload protection current limitation short circuit protection overtemperature protection overvoltage protection (including load dump) clamp of negative voltage at output fast deenergizing of inductive loads 1) low ohmic inverse current operation reverse battery protection diagnostic feedback with load current sense open load detection via current sense loss of v bb protection 2) e lectro s tatic d ischarge ( esd ) protection application power switch with current sense diagnostic feedback for 12 v and 24 v dc grounded loads most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in smart sipmos a chip on chip technology. fully protected by embedded protection functions. in charge pump level shifter rectifier limit for unclamped ind. loads gate protection current limit 2 overvoltage protection + v bb profet a out 3 & tab 1, 5 load gnd load output voltage detection r is is 4 i is i l v is i in logic gnd voltage sensor voltage source current sense logic esd temperature sensor r bb v in 1 ) with additional external diode. 2) additional external diode required for energized inductive loads (see page 8). product summary overvoltage protection v bb(az) 63 v output clamp v on ( cl ) 42 v operating voltage v bb(on) 5.0 ... 34 v on-state resistance r on 4.0 m w load current (iso) i l(iso) 97 a short circuit current limitation i l(scp) 180 a current sense ratio i l : i is 21000 to-218ab/5 5 1 straight leads
preliminary data sheet BTS550P semiconductor group page 2 1998-aug-31 pin symbol function 1outo output to the load. the pins 1 and 5 must be shorted with each other especially in high current applications! 3 ) 2 in i input, activates the power switch in case of short to ground 3v bb + positive power supply voltage, the tab is electrically connected to this pin. in high current applications the tab should be used for the v bb connection instead of this pin 4 ) . 4iss diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see truth table on page 6) 5outo output to the load. the pins 1 and 5 must be shorted with each other especially in high current applications! 3) maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4) v bb 42 v supply voltage for full short circuit protection, t j,start =-40 ...+150c: v bb 34 v load current (short circuit current, see page 4) i l self-limited a load dump protection v loaddump = u a + v s , u a = 13.5 v r i 5 ) = 2 w , r l = 0.54 w , t d = 200 ms, in, is = open or grounded v load dump 6 ) 90 v operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 360 w inductive load switch-off energy dissipation, single pulse v bb = 12v, t j,start = 150c, t c = 150c const., i l = 20 a, z l = 15 mh, 0 w , see diagrams on page 9 e as 3j electrostatic discharge capability (esd) human body model acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993, c = 100 pf, r = 1.5 k w v esd 4kv current through input pin (dc) current through current sense status pin (dc) see internal circuit diagrams on page 6 and 7 i in i is +15 , -250 +15 , -250 ma 3) not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4) otherwise add up to 0.5 m w (depending on used length of the pin) to the r on if the pin is used instead of the tab. 5) r i = internal resistance of the load dump test pulse generator. 6) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839. preliminary data sheet BTS550P semiconductor group page 3 1998-aug-31 thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case : r thjc 7 ) -- -- 0.35 k/w junction - ambient (free air): r thja -- 30 -- electrical characteristics parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (tab to pins 1,5, see measurement circuit page 6) i l = 20 a, t j = 25 c: v in = 0, i l = 20 a , t j = 150 c: r on -- 3.3 6.4 4.0 7.8 m w i l = 120 a , t j = 150 c: -- 8 v bb = 6v 8 ) , i l = 20 a , t j = 150 c: r on(static) -- 9 12 nominal load current 9 ) (tab to pins 1,5) iso 10483-1/6.7: v on = 0.5 v, t c = 85 c 10 ) i l(iso) 80 97 -- a maximum load current in resistive range (tab to pins 1,5) v on = 1.8 v, t c = 25 c: see diagram on page 12 v on = 1.8 v, t c = 150 c: i l(max) 350 180 -- -- -- -- a turn-on time 11 ) i in to 90% v out : turn-off time i in to 10% v out : r l = 1 w , t j =-40...+150c t on t off 140 40 -- -- 600 150 m s slew rate on 11) (10 to 30% v out ) r l = 1 w , t j =25c d v /dt on -- 0.45 -- v/ m s slew rate off 11) (70 to 40% v out ) r l = 1 w , t j =25c -d v /dt off -- 0.55 -- v/ m s 7) thermal resistance r thch case to heatsink (about 0.25 k/w with silicone paste) not included! 8 ) decrease of v bb below 10 v causes a slowly a dynamic increase of r on to a higher value of r on(static) . as long as v bin > v bin(u) max , r on increase is less than 10 % per second for t j < 85 c. 9) not tested, specified by design. 10) t j is about 105c under these conditions. 11 ) see timing diagram on page 13. inverse load current operation on-state resistance (pins 1,5 to pin 3) v bin = 12 v, i l = - 20 a t j = 25 c: see diagram on page 9 t j = 150 c: r on(inv) -- 3.3 6.4 4.0 7.8 m w nominal inverse load current (pins 1,5 to tab) v on = -0.5 v, t c = 85 c 10 i l(inv) 80 97 -- a drain-source diode voltage (v out > v bb ) i l = - 20 a, i in = 0, t j = +150c - v on -- 0.8 -- v preliminary data sheet BTS550P parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 4 1998-aug-31 operating parameters operating voltage ( v in = 0) 8, 12 ) v bb(on) 5.0 -- 34 v undervoltage shutdown 13 ) v bin(u) 2.0 3.0 4.5 v undervolta g e start of char g e pump see diagram page 14 v bin(ucp) 3.5 4.5 6.0 v overvoltage protection 14 ) t j = -40c: i bb = 15 ma t j = 25...+150c: v bin(z) 60 62 -- 66 -- -- v standby current t j =-40...+25c: i in = 0 t j = 150c: i bb(off) -- -- 15 25 25 50 m a protection functions short circuit current limit (tab to pins 1,5) v on = 12 v, time until shutdown max. 350 m s t c =-40c: t c =25c: t c =+150c: i l(scp) -- -- 120 170 180 170 -- 250 -- a short circuit shutdown delay after input current positive slope, v on > v on(sc) min. value valid only if input "off-signal" time exceeds 30 m s t d(sc) 80 -- 350 m s output clamp 15 ) i l = 40 ma: (inductive load switch off) i l = 20 a: - v out(cl) -- -- 16.8 19.0 -- -- v output clamp (inductive load switch off) at v out = v bb - v on(cl) (e.g. overvoltage) i l = 40 ma v on(cl) 39 42 46.5 v short circuit shutdown detection voltage (pin 3 to pins 1,5) v on(sc) -- 6 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis d t jt -- 10 -- k 12 ) if the device is turned on before a v bb -decrease, the operating voltage range is extended down to v bin(u) . for the voltage range 0..34 v the device is fully protected against overtemperature and short circuit. 13 ) v bin = v bb - v in see diagram on page 6. when v bin increases from less than v bin(u) up to v bin(ucp) = 5 v (typ.) the charge pump is not active and v out ? v bb - 3 v. 14) see also v on(cl) in circuit diagram on page 7. 15 ) this output clamp can be "switched off" by using an additional diode at the is-pin (see page 7). if the diode is used, v out is clamped to v bb - v on(cl) at inductive load switch off. preliminary data sheet BTS550P parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 5 1998-aug-31 reverse battery reverse battery voltage 16 ) - v bb -- -- 32 v on-state resistance (pins 1,5 to pin 3) t j = 25 c: v bb = -12v, v in = 0, i l = - 20 a, r is = 1 k w t j = 150 c: r on(rev) -- 3.8 -- 4.6 9 m w integrated resistor in v bb line r bb -- 120 -- w diagnostic characteristics current sense ratio, i l = 120 a, t j =-40c: static on-condition, t j =25c: k ilis = i l : i is , t j =150c: v on < 1.5 v 17) , i l = 20 a, t j =-40c: v is < v out - 5 v, t j =25c: v bin > 4.0 v t j =150c: see dia g ram on pa g e 11 i l = 12 a, t j =-40c: t j =25c: t j =150c: i l = 6 a, t j =-40c: t j =25c: t j =150c: k ilis 19 000 19 000 18 400 19 300 19 500 18 500 19 000 19 000 17 500 17 000 17 000 17 000 21 100 20 900 19 600 22 500 21 500 20 500 23 000 22 500 20 000 26 000 23 800 20 000 22 500 22 500 22 000 25 500 24 800 23 000 27 500 26 000 22 000 42 000 33 000 26 000 i is =0 by i in =0 (e.g. during deenergizing of inductive loads) : sense current saturation i is,lim 6.5 -- -- ma current sense leakage current i in = 0, v is = 0: v in = 0, v is = 0, i l 0: i is(ll) i is(lh) -- -- -- 2 0.5 -- m a current sense settling time 18 ) t s(is) -- -- 500 m s overvoltage protection t j =-40c: i bb = 15 ma t j = 25...+150c: v bis(z) 60 62 -- 66 -- -- v input input and operatin g current ( see dia g ram pa g e 12 ) in grounded (v in = 0) i in(on) -- 0.8 1.5 ma input current for turn-off 19) i in(off) -- -- 80 m a 16 ) the reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). note that under off-conditions ( i in = i is = 0) the power transistor is not activated. this results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! increasing reverse battery voltage capability is simply possible as described on page 8. 17) if v on is higher, the sense current is no longer proportional to the load current due to sense current saturation, see i is,lim . 18 ) not tested, specified by design. 19 ) we recommend the resistance between in and gnd to be less than 0.5 k w for turn-on and more than 500 k w for turn-off. consider that when the device is switched off (i in = 0) the voltage between in and gnd reaches almost v bb . preliminary data sheet BTS550P parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 6 1998-aug-31 truth table input current output current sense remark level level i is normal operation l h l h 0 nominal =i l / k ilis , up to i is =i is,lim very high load current hh i is, lim up to v on =v on(fold back) i is no longer proportional to i l current- limitation hh 0 v on > v on(fold back) if v on >v on(sc) , shutdown will occure short circuit to gnd l h l l 0 0 over- temperature l h l l 0 0 short circuit to v bb l h h h 0 preliminary data sheet BTS550P semiconductor group page 8 1998-aug-31 reverse battery protection logic is in is r v r out l r power gnd signal gnd v bb - power transistor in r bb r d s d r v 3 1 k w, r is = 1 k w nominal. add r in for reverse battery protection in applications with v bb above 16 v 16) ; recommended value: 1 r in + 1 r is + 1 r v = 0.1a | v bb | - 12v if d s is not used (or 1 r in = 0.1a | v bb | - 12v if d s is used). to minimize power dissipation at reverse battery operation, the summarized current into the in and is pin should be about 120ma. the current can be provided by using a small signal diode d in parallel to the input switch, by using a mosfet input switch or by proper adjusting the current through r is and r v . v bb disconnect with energized inductive load provide a current path with load current capability by using a diode, a z-diode, or a varistor. ( v zl < 72 v or v zb < 30 v if r in =0). for higher clamp voltages currents at in and is have to be limited to 250 ma. version a: profet v in out is bb v bb v zl version b: profet v in out is bb v bb v zb note that there is no reverse battery protection when using a diode without additional z-diode v zl , v zb . version c: sometimes a neccessary voltage clamp is given by non inductive loads r l connected to the same switch and eliminates the need of clamping circuit: profet v in out is bb v bb r l preliminary data sheet BTS550P semiconductor group page 9 1998-aug-31 inverse load current operation profet v in out is bb v bb v out - i l r is v is v in + - + - i is the device is specified for inverse load current operation ( v out > v bb > 0v ). the current sense feature is not available during this kind of operation ( i is = 0). with i in = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in consi- derably increased power dissipation. if the device is switched on (v in = 0), this power dissipation is decreased to the much lower value r on(inv) * i 2 (specifications see page 3). note: temperature protection during inverse load current operation is not possible! inductive load switch-off energy dissipation profet v in out is bb e e e e as bb l r e load l r l { z l r is i in v bb i (t) l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 w : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150c, v bb = 12 v, r l = 0 w l [mh] 1 10 100 1000 10000 0 5 10 15 20 i l [a] preliminary data sheet BTS550P semiconductor group page 10 1998-aug-31 options overview type bts 550p 650p 555 overtemperature protection with hysteresis xx t j >150 c, latch function 22 ) t j >150 c, with auto-restart on cooling x x short circuit to gnd protection switches off when v on >6 v typ. (when first turned on after approx. 180 m s) xx overvoltage shutdown -- output negative voltage transient limit to v bb - v on(cl) xx to v out = -19 v typ x 23 ) x 23) 22 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out 1 0 v only if forced externally). so the device remains latched unless v bb < v on(sc) (see page 4). no latch between turn on and t d(sc) . 23 ) can be "switched off" by using a diode d s (see page 7) or leaving open the current sense output. preliminary data sheet BTS550P semiconductor group page 11 1998-aug-31 characteristics current sense versus load current: i is = f ( i l ) i is [ma] i l [a] current sense ratio: k ilis = f ( i l ), t j = -40 c k ilis i l [a] current sense ratio: k ilis = f ( i l ), t j = 25 c k ilis i l [a] current sense ratio: k ilis = f ( i l ), t j = 150 c k ilis i l [a] 16000 18000 20000 22000 24000 26000 28000 30000 0 20406080100120 typ min max 16000 18000 20000 22000 24000 26000 28000 30000 0 20406080100120 typ min max 16000 18000 20000 22000 24000 26000 28000 30000 0 20406080100120 typ min max 16000 18000 20000 22000 24000 26000 28000 30000 32000 34000 36000 38000 40000 42000 0 20406080100120 min typ max 16000 18000 20000 22000 24000 26000 28000 30000 32000 34000 0 20 40 60 80 100 120 min typ max 0 1 2 3 4 5 6 7 0 20406080100120 max min preliminary data sheet BTS550P semiconductor group page 12 1998-aug-31 typ. current limitat ion ch aracteristic i l = f (v on , t j ) i l [a] v on [v] in case of v on > v on(sc) (typ. 6 v) the device will be switched off by internal short circuit detection. typ. on-state resistance r on = f (v bb , t j ) ; i l = 20 a; v in = 0 r on [mohm] v bb [v] typ. input cu rrent i in = f ( v bin ), v bin = v bb - v in i in [ma] v bin [v] 0 100 200 300 400 500 600 700 0 5 10 15 20 v on > v on(sc) only for t < t d(sc) (otherwise immediate t j = -40c t j = 25c t j = 150c v on(fb) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20406080 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 static dynamic t j = 150c 85c 25c -40c 40 preliminary data sheet BTS550P semiconductor group page 13 1998-aug-31 timing diagrams figure 1a: switching a resistive load, change of load current in on-condition: i in t v out i l i is t son(is) tt slc(is) load 1 load 2 soff(is) t t t on off slc(is) 90% dv/dton dv/dtoff 10% the sense signal is not valid during a settling time after turn-on/off and after change of load current. figure 2a: switching motors and lamps: i in t v out i il i is sense current saturation can occur at very high inrush currents (see i is,lim on page 5). figure 2b: switching an inductive load: i in t v out i l i is figure 3a: short circuit: shut down by short circuit detection, reset by i in = 0. i in i l i l(scp) i is t t d(sc) v out =0 v out >>0 shut down remains latched until next reset via input. preliminary data sheet BTS550P semiconductor group page 14 1998-aug-31 figure 4a: overtemperature reset if t j < t jt i in t i is v out t j auto restart figure 6a: undervoltage restart of charge pump, overvoltage clamp 0 2 4 6 04 v out v bin(ucp) v in = 0 i in = 0 v on(cl) v bin(u) v bin(u) dynamic, short undervoltage not below v on(cl) v bb preliminary data sheet BTS550P semiconductor group page 15 1998-aug-31 package and ordering code all dimensions in mm to-218ab/5 option e3146 ordering code e3146 q67060-s6952a3 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, d-81541 mnchen ? siemens ag 1998. all rights reserved attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing : please use the re cycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorised for such purpose! critical components 24 ) of the semiconductor group of siemens ag, may only be used in life supporting devices or systems 25 ) with the express written approval of the semiconductor group of siemens ag. 24) a critical component is a component used in a life-support device or system whose f ailure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 25) life support devices or systems are int ended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. if they fail, it is reasonably to assume that the health of the user or other persons may be endangered. |
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